The DE400 Electron Beam Evaporator is assembled with one e-beam source, the substrate is mounting on the horizontal axial on the side of chamber for the substrate polar to change the deposition angle.
DE400電子束蒸發(fā)儀配置一個電子束蒸發(fā)源，基片架裝于腔體側(cè)面水平轉(zhuǎn)動的軸上，基片可以改變鍍膜角度
Configuration
主要配置
| Evaporation Chamber 蒸發(fā)腔體 | 304 stainless steel chamber with viewport 蒸發(fā)腔體為304不銹鋼，并有觀察窗 |
| Vacuum Pumping 真空泵 | Cryo-pump or Turbo pump and dry rough pump 蒸發(fā)室配備分子泵和無油機械泵 |
| Vacuum Valve 真空閥門 | Pneumatic UHV gate valves 氣動控制超高真空插板閥 |
| Evaporation Source 蒸發(fā)源 | Multi pocket e-beam source 多坩堝電子束蒸發(fā)源 |
| Substrate Chamber 樣品室 | 304 stainless steel chamber with viewport 蒸發(fā)腔體為304不銹鋼，并有觀察窗 |
| Sample Stage 樣品臺 | Side mount polar Substrate 側(cè)面安裝的轉(zhuǎn)角樣品臺 |
| Film Control 膜厚檢測 | Crystal Film thickness Monitor and Control 晶振膜厚監(jiān)控 |
| Vacuum Gauging 真空測量 | Wide range vacuum gauge and rough gauge 寬量程真空計用于測量真空和粗抽計 |
Specification
主要技術(shù)指標(biāo)
| The Base Vacuum Pressure 極限真空度 | better than 9E-9 Torr 優(yōu)于9E-9托 |
| Sample Loading Capacity 裝樣能力 | One Max. 4 inch flat substrate 一個zui大4英寸的平板基片 |
| Rate Resolution 蒸發(fā)速率分辨率 | 0.05 Angstroms/sec |
| Thickness Resolution = 0.02 Angstroms 膜厚分辨率 | 0.02 Angstroms |
Features
特點
Unique Design of Substrate Chamber and Sources chamber isolated by UHV gate valve
*的結(jié)構(gòu)設(shè)計，基片腔體和蒸發(fā)源腔體通過UHV門閥隔開
All Metal Seal, True UHV System
系統(tǒng)采用全金屬密封，真正的超高真空系統(tǒng)
Stand along system frameworks and electric rack
獨立的系統(tǒng)機架和電器柜
E-beam source Water Interlock
電子束蒸發(fā)源冷水安全互鎖
Optional Substrate Cooling
樣品臺可選水冷
Typical Application
典型應(yīng)用
For R&D Thin Film Deposition
用于薄膜沉積研發(fā)
Ideal tools for LIFT-OFF process
用于LIFT-OFF工藝的理想平臺
Ideal tools for GLAD process
用于GLAD工藝的理想平臺
Evaporate metal, Semiconductor or Insulation Materials （material depends）
可蒸發(fā)金屬，半導(dǎo)體或介質(zhì)材料（視具體材料而定）
Evaporate Magnetic Materials
可蒸發(fā)磁性材料
LOAD LOCK
預(yù)真空進樣室（可選）
