晶體尺寸：~6毫米電學性能：半導體晶體結構：六邊形晶胞參數(shù)：取決于合金成分：a = b = 0.31 -0.33 nm and c = 1.21 -1.29 nm, α = β = 90#176;, γ = 120#176;晶體類型：合成晶體純度：＞99.995%

硫硒化鉬晶體 MoSSe(Molybdenum Sulfide Diselenide) 
晶體尺寸：~6毫米
電學性能：半導體
晶體結構：六邊形
晶胞參數(shù)：取決于合金成分：a = b = 0.31 -0.33 nm and c = 1.21 -1.29 nm, α = β = 90°, γ = 120°
晶體類型：合成
晶體純度：＞99.995%

X-ray diffraction on a MoSSe single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 5 XRD peaks correspond, from left to right, to (00l) with l = 2, 4, 6, 8, 10

Powder X-ray diffraction (XRD) of a single crystal MoSSe. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.

Stoichiometric analysis of a single crystal MoSSe by Energy-dispersive X-ray spectroscopy (EDX).

Raman spectrum of a single crystal MoSSe. Measurement was performed with a 785 nm Raman system at room temperature.