硒化鎵晶體 2H-GaSe（Gallium Selenide）晶體尺寸：10毫米電學(xué)性能：半導(dǎo)體晶體結(jié)構(gòu)：六邊形晶胞參數(shù)：a = b = 0.374 nm, c = 1.592 nm, α = β = 90#176;, γ =120#176;晶體類型：合成晶體純度：＞99.995%

硒化鎵晶體 2H-GaSe(Gallium Selenide)
晶體尺寸：10毫米
電學(xué)性能：半導(dǎo)體
晶體結(jié)構(gòu)：六邊形
晶胞參數(shù)：a = b = 0.374 nm, c = 1.592 nm, α = β = 90°, γ =120°
晶體類型：合成
晶體純度：＞99.995%

X-ray diffraction on a GaSe single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 5 XRD peaks correspond, from left to right, to (001) with h = 4, 6, 8, 10, 12

Powder X-ray diffraction (XRD) of a single crystal GaSe. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.

Stoichiometric analysis of a single crystal GaSe by Energy-dispersive X-ray spectroscopy (EDX).

Raman spectrum of a single crystal GaSe. Measurement was performed with a 785 nm Raman system at room temperature.